PART |
Description |
Maker |
BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-41486 AT-41486-BLK AT-41486-TR1 AT41486 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AA028N1-99 |
230 GHz Low Noise Amplifier GT 14C 10#12 4#16 SKT PLUG 23-30 GHz Low Noise Amplifier
|
Alpha Industries Inc Alpha Industries, Inc. ALPHA[Alpha Industries] http://
|
AT-41400 AT-41400-GP4 AT-41400-G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
AT-41435 AT41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Search -----> AT-41435
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
BAT15-04 BAT15_04 Q62702-A504 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) 硅双肖特基二极管(星展混频器应用12 GHz低噪声系数低屏障型) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
PE3240 PE3240EK 3240-11 3240-12 3240-00 |
2.2 GHz UltraCMOS⑩ Integer-N PLL for Low Phase Noise Applications 2.2 GHz UltraCMOSInteger-N PLL for Low Phase Noise Applications 2.2 GHz UltraCMOS Integer-N PLL for Low Phase Noise Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
BFQ82 |
NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
Siemens Semiconductor Group
|
TMT-4-0504 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|